DatasheetsPDF.com

EC-10N20

EXICON
Part Number EC-10N20
Manufacturer EXICON
Description N & P-CHANNEL LATERAL MOSFET
Published Oct 1, 2019
Detailed Description EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 ...
Datasheet PDF File EC-10N20 PDF File

EC-10N20
EC-10N20

Overview
EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.
2 1.
57 + 0.
5 11.
5 + 0.
3 25.
00 10.
85 + 0.
1 3 30.
15 + 0.
15 16.
90 + 0.
15 39.
00 19.
50 + 0.
05 1.
0 + 0.
05 21 R 1.
50 max MECHANICAL DATA R4.
3 + 0.
1 1.
GATE 2.
DRAIN 3.
SOURCE dimensions in mm ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) (EC-10)16 (EC-10)20 VDSX VGSS ID ID(PK) Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Body Drain Diode 160V 200V +- 14V 8A 8A PD Total Power Dissipation @ (T case = 25°C) C Tstg Storage Temperature Range 125W -55 to 150°C Tj R0JC Maximum Operating Junction Temperature Thermal Resistance Junction - case 150°C 1.
0°C/W Tel: +44 (0)1702 543500 Fax: +44 (0)1702 543700 1 EC-10N16/20 & EC-10P16/20 T03P/T0247 2.
0+ 0.
5 5.
0+ 0.
31 15.
88+ 0.
4 20.
13 +0.
33 6.
15 3.
68+ 1.
3 MECHANICAL DATA 0.
59+ 0.
2 2.
4 + 0.
2 20.
06 +0.
26 123 4.
5 3.
0 + 0.
13 1.
89+ 0.
24 1.
2 + 0.
2 5.
25 1.
GATE 2.
SOURCE (CASE) 3.
DRAIN dimensions in mm STATIC CHARACTERISTICS Characteristic (TC= 25°C unless otherwise stated) Test Conditions MIN TYP MAX UNIT BVDSX Drain – Source Breakdown Voltage VGS = -10V ID = 10mA (EC-10)16 (EC-10)20 160 200 V V BVGSS V GS(OFF) V DS(SAT)* I DSX Gate – Source Breakdown Voltage VDS = 0 Gate - Source Cut-O Voltage Drain - Source Saturation Voltage VDS = 10V VGD = 0 Drain - Source Cut - O Current VGS = -10V IG=-+100uA ID = 100mA ID = 8A VDS = 160V (EC-10)16 VDS =200V (EC-10)20 -+14 0.
15 V 1.
5 V 12 V 10 mA 10 Yfs* Forward Transfer Admittance VDS = 10V ID = 3A 0.
7 2S DYNAMIC CHARACTERISTICS (TC= 25°C unless otherwise stated) Characteristic Test Conditions N-Channel P-Channel UNIT Ciss Input Capacitance Coss Output Capacitance VDS= 10V f = 1MHz 500 300 700 300 Crss Reverse Transfer Capacitance 10 25 pF t on Turn-on Time t o Turn-o Time VDS= 20V ID = 7A 100 50 120 60 80 ns * Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2% T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)