DatasheetsPDF.com

IXBT20N360HV

IXYS
Part Number IXBT20N360HV
Manufacturer IXYS
Description Monolithic Bipolar MOS Transistor
Published Oct 4, 2019
Detailed Description Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20...
Datasheet PDF File IXBT20N360HV PDF File

IXBT20N360HV
IXBT20N360HV

Overview
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat)  3600V 20A 3.
4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3600 3600 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 70 20 220 ICM = 160 VCES  1500 10 430 -55 .
.
.
+150 150 -55 .
.
.
+150 Maximum Lead Temperature for Soldering Plastic Body for 10s 300 26...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)