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TK31E60X

Toshiba
Part Number TK31E60X
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 9, 2019
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS-H) TK31E60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low dra...
Datasheet PDF File TK31E60X PDF File

TK31E60X
TK31E60X

Overview
MOSFETs Silicon N-Channel MOS (DTMOS-H) TK31E60X 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
073 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 1.
5 mA) 3.
Packaging and Internal Circuit TK31E60X 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR 600 ±30 30.
8 123 230 437 7.
7 30.
8 123 150 -55 to 150 0.
6 V A W mJ A  Nm Note:...


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