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TRF7610

Texas Instruments
Part Number TRF7610
Manufacturer Texas Instruments
Description SILICON MOSFET POWER AMPLIFIER
Published Dec 6, 2019
Detailed Description TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM D Single Positive Power Supply (No Negative Voltage Required) D Advan...
Datasheet PDF File TRF7610 PDF File

TRF7610
TRF7610

Overview
TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM D Single Positive Power Supply (No Negative Voltage Required) D Advanced Silicon RFMOS™ Technology D 4.
8-V Operation for GSM Applications D 35-dBm Typical Output Power D 30-dB Typical Power Gain D 40% Typical PAE with 5-dBm Input Power D 45% Typical PAE with 8-dBm Input Power D Output Power Control D Few External Components Required for Operation D Thermally Enhanced Surface-Mount Package for Small Circuit Footprint D Rugged, Sustains 20:1 Load Mismatch D 800-MHz to 1000-MHz Wide Operational Frequency Range D Low Standby Current (< 10 µA) VG2 VG3 VPC VG1 NC RFIN RFIN NC VG1 VPC VG3 VG2 SLWS059B – MAY 1997 – REVISED AUGUST 1998 PWP PACKAGE (TOP VIEW) 1 24 VD1/VD2 2 23 GND 3 22 RFOUT/VD3 4 21 RFOUT/VD3 5 20 RFOUT/VD3 6 19 RFOUT/VD3 7 18 RFOUT/VD3 8 17 RFOUT/VD3 9 16 RFOUT/VD3 10 15 RFOUT/VD3 11 14 GND 12 13 VD1/VD2 NC – No internal connection description The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global systems for mobile communications (GSM).
It uses Texas Instruments RFMOS™ process and consists of a three-stage amplifier with output power control.
Few external components are required for operation.
The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section of a transmitter to a level that is sufficient for connection to the antenna.
The RF input port, RFIN, and the RF output port, RFOUT, require simple external matching networks.
A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications for time-division multiple-access (TDMA) systems.
The power control signal causes a change in output power as the voltage applied to VPC varies between 0 V and 3 V.
With the RF input power applied to RFIN at 5 dBm, adjusting VPC from 0 V to 3 V increases the output power from a typical value of – 43 dBm at VPC = 0 V to a typical value of 35 dBm at VP...


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