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FCH041N60F-F085

ON Semiconductor
Part Number FCH041N60F-F085
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jan 10, 2020
Detailed Description FCH041N60F-F085 N-Channel SuperFET II FRFET MOSFET FCH041N60F-F085 N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 m...
Datasheet PDF File FCH041N60F-F085 PDF File

FCH041N60F-F085
FCH041N60F-F085

Overview
FCH041N60F-F085 N-Channel SuperFET II FRFET MOSFET FCH041N60F-F085 N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 mΩ Features „ Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A „ Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A „ Low Effective Output Capacitance (Typical Coss(eff.
) = 720 nF) „ 100% Avalanche Tested „ Qualified to AEC Q101 „ RoHS Compliant Description SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.
SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
G D S G TO-247 Application „ Automotive On Board Charger „ Automotive DC/DC converter for HEV Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) Pulsed Drain Current EAS dv/dt Single Pulse Avalanche Rating MOSFET dv/dt Peak Diode Recovery dv/dt PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C (Note 1) (Note 2) (Note 3) Ratings 600 ±20 76 See Fig 4 2025 100 50 595 4.
76 -55 to + 150 0.
21 40 D S Units V V A A mJ V/ns W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCH041N60F FCH041N60F-F085 TO-247 - - 30 Notes: 1: Starting TJ = 25°C, L = 18mH, IAS = 15A, VDD = 100V...


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