N-Channel Enhancement Mode Power MOSFET
Description
Elektronische Bauelemente
SSG4490N
5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-p...
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