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FGA25S125P

ON Semiconductor
Part Number FGA25S125P
Manufacturer ON Semiconductor
Description 25A Shorted-anode IGBT
Published Jan 17, 2020
Detailed Description FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features • High Speed Switchin...
Datasheet PDF File FGA25S125P PDF File

FGA25S125P
FGA25S125P

Overview
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.
8 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications.
The device can operate in parallel configuration with exceptional avalanche capability .
This device is designed for induction heating and microwave oven.
C G CE TO-3PN Absolute Maximum Ratings Symbol VCES VGES I...


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