Silicon Carbide Power MOSFET
Description
VDS 1200 V
C3M0016120K
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 mΩ
N-Channel Enhancement Mode
Features
Package
3rd generation SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with l...
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