P-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec. No. : C960H8 Issued Date : 2014.10.30 Revised Date : 2020.02.04 Page No. : 1/10
P-Channel Enhancement Mode Power MOSFET
MTB060P15H8
BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C
Features
VGS=-10V, ID=-5.2A RDSON(TYP)
VGS=-4.5V, ID=-5A
Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-...
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