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FQPF7N70

Oucan Semi
Part Number FQPF7N70
Manufacturer Oucan Semi
Description 7A N-Channel MOSFET
Published Mar 18, 2020
Detailed Description FQP7N70/FQPF7N70 700V, 7A N-Channel MOSFET General Description Product Summary The FQP7N70 & FQPF7N70 have been fabri...
Datasheet PDF File FQPF7N70 PDF File

FQPF7N70
FQPF7N70

Overview
FQP7N70/FQPF7N70 700V, 7A N-Channel MOSFET General Description Product Summary The FQP7N70 & FQPF7N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 800V@150℃ 7A < 1.
8Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP7N70 FQPF7N70 Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.
2 4.
2* 24 5 187 375 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 198 1.
6 38.
5 0.
3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP7N70 65 0.
5 FQPF7N70 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
0.
63 3.
25 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 FQP7N70/FQPF7N70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=700V, VGS=0V VDS=560V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID...


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