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FQP12N50

Oucan Semi
Part Number FQP12N50
Manufacturer Oucan Semi
Description 12A N-Channel MOSFET
Published Mar 18, 2020
Detailed Description FQP12N50/FQPF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The FQP12N50 & FQPF12N50 have been ...
Datasheet PDF File FQP12N50 PDF File

FQP12N50
FQP12N50

Overview
FQP12N50/FQPF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The FQP12N50 & FQPF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 600V@150℃ 12A < 0.
52Ω TO 220 TO 220F Top View D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP12N50/FQB12N50 FQPF12N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 12 8.
4 48 5.
5 454 908 40 5 12* 8.
4* TC=25°C Power Dissipation B Derate above 25oC PD 250 2 50 0.
4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP12N50/FQB12N50 65 0.
5 FQPF12N50 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
0.
5 2.
5 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 500 600 0.
54 V V/ oC IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V VDS=400V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate ...


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