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FDG6322C

ON Semiconductor
Part Number FDG6322C
Manufacturer ON Semiconductor
Description Dual N & P Channel Digital FET
Published Mar 23, 2020
Detailed Description FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field ...
Datasheet PDF File FDG6322C PDF File

FDG6322C
FDG6322C

Overview
FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimizeon-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features N-Ch 0.
22 A, 25 V, RDS(ON) = 4.
0 Ω @ VGS= 4.
5 V, RDS(ON) = 5.
0 Ω @ VGS= 2.
7 V.
P-Ch ...


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