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FGD3245G2-F085C

ON Semiconductor
Part Number FGD3245G2-F085C
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Apr 1, 2020
Detailed Description FGD3245G2-F085C EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT Features • SCIS Energy = 320 mJ at TJ...
Datasheet PDF File FGD3245G2-F085C PDF File

FGD3245G2-F085C
FGD3245G2-F085C

Overview
FGD3245G2-F085C EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT Features • SCIS Energy = 320 mJ at TJ = 25°C • Logic Level Gate Drive • Low Saturation Voltage • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 450 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 ISCIS = 14.
6 A, L = 3.
0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ESCIS150 ISCIS = 10.
9 A, L = 3.
0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.
0 V, TC = 25°C IC110 Collector Current Continuous at VGE = 4.
0 V, TC = 110°C VGEM Gate to Emitter Voltage Continuous PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ, TSTG Operating Junction and Storage Temperature 320 180 23 23 ±10 150 1.
1 −55 to +175 mJ mJ A A V W W/°C °C TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 300 °C TPKG Reflow Soldering according to JESD020C 260 °C ESD HBM−Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM−Electrostatic Discharge Voltage at 1 W 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Self clamped inductive Switching Energy (ESCIS25) of 320 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.
6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2.
Self Clamped inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.
9 A, VCC = 100 V during inductor charging and VCC = ...


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