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SD56060

STMicroelectronics
Part Number SD56060
Manufacturer STMicroelectronics
Description RF power transistor
Published Apr 3, 2020
Detailed Description SD56060 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - target spe...
Datasheet PDF File SD56060 PDF File

SD56060
SD56060

Overview
SD56060 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - target specification Features • Excellent thermal stability • Common source configuration Push-pull • POUT = 60 W with 16 dB gain @ 860 MHz • BeO-free package 0 (SR[\VHDOHG Figure 1.
Pin connections  Description The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz.
It is designed for high gain and broadband performance operating in common source mode at 28 V.
It is ideal for applications from 1 to 1000 MHz.
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