650V half bridge gate driver
Description
2ED2108 (4) S06F (J)
2ED2108 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
Features
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Negative VS transient immunity of 100 V Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V Maximum bootstrap voltage (VB node) of ...
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