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UF3C065030B3

Part Number	UF3C065030B3
Manufacturer	UnitedSiC
Description	MOSFET
Published	Apr 15, 2020
Detailed Description	DATASHEET UF3C065030B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-27mW SiC Cascode Rev. A, March 2019 Description United S...
Datasheet	UF3C065030B3 PDF File

Overview

DATASHEET UF3C065030B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-27mW SiC Cascode Rev.
A, March 2019 Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.
These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
Features w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recove...

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