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NVBG020N120SC1

ON Semiconductor
Part Number NVBG020N120SC1
Manufacturer ON Semiconductor
Description SiC MOSFET
Published Apr 15, 2020
Detailed Description DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 Features • Typ....
Datasheet PDF File NVBG020N120SC1 PDF File

NVBG020N120SC1
NVBG020N120SC1

Overview
DATA SHEET www.
onsemi.
com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 Features • Typ.
RDS(on) = 20 mW • Ultra Low Gate Charge (typ.
QG(tot) = 220 nC) • Low Effective Output Capacitance (typ.
Coss = 258 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On Board Charger • Automotive DC−DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to−Source Voltage TC < 1...


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