DatasheetsPDF.com

NTBG020N120SC1

ON Semiconductor
Part Number NTBG020N120SC1
Manufacturer ON Semiconductor
Description SiC MOSFET
Published Apr 15, 2020
Detailed Description DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Featur...
Datasheet PDF File NTBG020N120SC1 PDF File

NTBG020N120SC1
NTBG020N120SC1

Overview
DATA SHEET www.
onsemi.
com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ.
RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VDSS 1200 V VGS −15/+25 V VGSop −5/+2...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)