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BCP559A

SeCoS
Part Number BCP559A
Manufacturer SeCoS
Description PNP Silicon Medium Power Transistor
Published Apr 17, 2020
Detailed Description Elektronische Bauelemente BCP559A -3A, -180V PNP Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-...
Datasheet PDF File BCP559A PDF File

BCP559A
BCP559A

Overview
Elektronische Bauelemente BCP559A -3A, -180V PNP Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCP559A is designed for medium poweramplifier applications.
FEATURES Low collector saturation voltage : VCE(sat)=-0.
5V(Typ.
) RoHS Compliant Product MARKING 559A Date code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch SOT-89 4 123 A EC B F G H J D K L 1.
Base 2.
Collector 3.
Emitter REF.
A B C D E F Millimeter Min.
Max.
4.
40 3.
94 4.
60 4.
25 1.
40 1.
60 2.
30 2.
60 1.
50 1.
70 0.
89 1.
2 0 REF.
G H J K L Millimeter Min.
Max.
0.
40 0.
58 1.
50 TYP 3.
00 TYP 0.
32 0.
52 0.
35 0.
44 Collector 2 4 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Symbol VCBO Ratings -180 Collector-Emitter Voltage VCEO -140 Emitter-Base Voltage VEBO -7 Collector Current (DC) IC -3 Collector Current (Pulse) ICM -10 Collector Power Dissipation PD 0.
6 1.
5 1 2.
1 2 Junction & Storage Temperature TJ, TSTG Note: 1.
When mounted on FR-4 PCB with area measuring 25×25×1.
6 mm.
2.
When mounted on ceramic with area measuring 50×50×1.
6 mm.
150, -55~150 Unit V V V A A W °C http://www.
SeCoSGmbH.
com/ 26-Dec-2014 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente BCP559A -3A, -180V PNP Silicon Medium Power Transistor ELECTRICAL CHARACTERISTICS (TA=25 °C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Test Conditions Collector - Base Breakdown Voltage BVCBO -180 - - V IC= -100uA, IE=0 Increased Operating Voltage Collector - Emitter Breakdown Voltage BVCER -180 - - V IC= -1uA, RB≦1KΩ BVCEO -140 - - V IC= -10mA, IB=0 Emitter - Base Breakdown Voltage BVEBO -7 - - V IE= -100uA, IC=0 Collector Cut - Off Current ICBO - - -50 nA VCB= -150V, IE=0 ICER - - -50 nA VCB = -150V, R≦1KΩ Emitter Cut - Off Current IEBO - - -10 nA VEB= -...


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