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UPG11N120

UTC
Part Number UPG11N120
Manufacturer UTC
Description 1200V NPT PLANAR IGBT
Published Apr 17, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UPG11N120 Insulated Gate Bipolar Transistor 1200V NPT PLANAR IGBT  DESCRIPTION The U...
Datasheet PDF File UPG11N120 PDF File

UPG11N120
UPG11N120

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UPG11N120 Insulated Gate Bipolar Transistor 1200V NPT PLANAR IGBT  DESCRIPTION The UTC UPG11N120 is a 1200V NPT Planar Insulated Gate Bipolar Transistor.
it uses UTC’s advanced technology to offers superior conduction and switching performance, high avalanche ruggedness and easy parallel operation.
 FEATURES * High speed switching * High input impedance * Low saturation voltage: VCE(SAT) =2.
4V @ IC=11A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UPG11N120L-T47-T UPG11N120G-T47-T TO-247 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GCE Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2019 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R234-010.
A UPG11N120 Insulated Gate Bipolar Transistor  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V Continuous Collector Current TC=25°C TC=110°C IC 22 A 11 A Collector Current Pulsed (Note 1) ICM 80 A Power Dissipation PD 300 W Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
2.
Pulse width limited by maximum junction temperature.
 THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL θJC RATINGS 0.
42  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) UNIT °C/W PARAMETER SYMBOL TEST CONDITIONS Off Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current BVCES ICES IGES IC=250μA, VGE=0V VCE=VCES, VGE=0V VGE=VGES, VCE= 0V On Characteristics Gate to Emitter Threshold Voltage Collector to Emitter Saturation Voltage VGE(TH) VCE(SAT) IC=90μA, VCE=VGE IC=11A, VGE=15V Dynamic Characteristics Input Capaci...


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