DatasheetsPDF.com

UT50N04

UTC
Part Number UT50N04
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Apr 21, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UT50N04 50A, 40V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT50N04 is a N-channel enha...
Datasheet PDF File UT50N04 PDF File

UT50N04
UT50N04


Overview
UNISONIC TECHNOLOGIES CO.
, LTD UT50N04 50A, 40V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT50N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and high switching speed.
 FEATURES * RDS(ON) ≤ 11 mΩ @ VGS=4.
5V, ID=20A RDS(ON) ≤ 7.
0 mΩ @ VGS=10V, ID=25A * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT50N04L-TA3-T UT50N04G-TA3-T TO-220 UT50N04L-TN3-R UT50N04G-TN3-R TO-252 UT50N04L-TQ2-T UT50N04G-TQ2-T TO-263 UT50N04L-TQ2-R UT50N04G-TQ2-R TO-263 UT50N04L-P3030-R UT50N04G-P3030-R PDFN3×3 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing G D S - - - - - Tube G D S - - - - - Tape Reel G D S - - - - - Tube G D S - - - - - Tape Reel S S S G D D D D Tape Reel www.
unisonic.
com.
tw Copyright © 2021 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-671.
E UT50N04  MARKING TO-220 / TO-252 / TO-263 Power MOSFET PDFN3×3 UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-671.
E UT50N04 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V TO-220 Continuous TO-252 (VGS=10V) TO-263 ID 50 A Drain Current PDFN3×3 TO-220 30 A Pulsed (Note 2) TO-252 TO-263 IDM 200 A PDFN3×3 60 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 78 mJ 1.
5 V/ns TO-220/TO-263 166 W Power Dissipation TO-252 PD 55 W PDFN3×3 32.
1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +175 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L=0.
1mH, IAS=39.
5A, VDD=25V, RG=25Ω, Starting TJ=25°...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)