Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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VBT1060C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TMBS ®
D2PAK (TO-263AB) K
2
1 VBT1060C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
60 V
IFSM
100 A
VF at IF =...
