Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
www.vishay.com
VB20120C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2
1 VB20120C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High ...
