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MRF7S24250N

NXP

RF Power LDMOS Transistor


Description
NXP Semiconductors Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET The 250 W CW RF power transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is...



NXP

MRF7S24250N

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