DatasheetsPDF.com

VS-GT300YH120N

Vishay
Part Number VS-GT300YH120N
Manufacturer Vishay
Description DIAP Trench IGBT
Published May 5, 2020
Detailed Description www.vishay.com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter...
Datasheet PDF File VS-GT300YH120N PDF File

VS-GT300YH120N
VS-GT300YH120N

Overview
www.
vishay.
com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERISTICS IGBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.
93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 °C 1.
99 V IF(DC) at 80 °C 300 A IGBT AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3.
92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1.
6 V 40 A Dual INT-A-PAK FEATURES • 1200 V IGBT trench and field stop technology with positive temperature coefficient • Low switching losses • Maximum junction temperature 175 °C • 10 μs short circuit...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)