DatasheetsPDF.com

VS-CPV363M4UPbF

Vishay
Part Number VS-CPV363M4UPbF
Manufacturer Vishay
Description IGBT SIP
Published May 5, 2020
Detailed Description www.vishay.com VS-CPV363M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) FEATURES IMS-2 PRIMARY CHARAC...
Datasheet PDF File VS-CPV363M4UPbF PDF File

VS-CPV363M4UPbF
VS-CPV363M4UPbF

Overview
www.
vishay.
com VS-CPV363M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) FEATURES IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (2.
1 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 7.
1 ARMS 125 °C 360 VDC 0.
8 Modulation depth (see fig.
1) 115 % VCE(on) (typical) at IC = 6.
8 A, 25 °C Speed 1.
7 V 8 kHz to 30 kHz Package SIP Circuit configuration Three phase inverter • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig.
1 for current vs.
frequency curve • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL VCES Continuous collector current, each IGBT IC Pulsed collector current Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage Isolation voltage ICM (1) ILM (2) IF IFM VGE VISOL Maximum power dissipation, each IGBT PD Operating junction and storage temperature range TJ, TStg Soldering temperature TEST CONDITIONS TC = 25 °C TC = 100 °C TC = 100 °C Any terminal to case, t = 1 min TC = 25 °C TC = 100 °C For 10 s, (0.
063" (1.
6 mm) from case) Mounting torque 6-32 or M3 sc...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)