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VS-GT80DA60U

Vishay
Part Number VS-GT80DA60U
Manufacturer Vishay
Description IGBT
Published May 5, 2020
Detailed Description www.vishay.com VS-GT80DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A SOT-22...
Datasheet PDF File VS-GT80DA60U PDF File

VS-GT80DA60U
VS-GT80DA60U

Overview
www.
vishay.
com VS-GT80DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 80 A, 25 °C IF (DC) Speed 600 V 80 A at TC = 97 °C 1.
83 V 56 A at TC = 100 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • High speed trench gate field-stop IGBT positive temperature coefficient • TJ maximum = 175 °C • FRED Pt® anti-parallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance ple...


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