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MRFE6VP61K25GSR5

Part Number	MRFE6VP61K25GSR5
Manufacturer	NXP
Description	RF Power LDMOS Transistors
Published	May 5, 2020
Detailed Description	Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral ...
Datasheet	MRFE6VP61K25GSR5 PDF File

Overview

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
They are unmatched input and output designs allowing wide frequency range utilization, between 1.
8 and 600 MHz.
 Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 24.
0 74.
0 22.
9 74.
6 Document Number: MRFE6VP61K25H Rev.
4.
1, 3/2014 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 1.
8--600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Application Circuits (1) — Typical Performance Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 27 CW 1300 27 81 40 CW 1300 26 85 81.
36 CW 1250 27 84 87.
5--108 CW 1100 ...

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MRFE6VP61K25GSR5 RF Power LDMOS Transistors - NXP

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