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VB20150S-M3

Vishay
Part Number VB20150S-M3
Manufacturer Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Published May 6, 2020
Detailed Description www.vishay.com VB20150S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V...
Datasheet PDF File VB20150S-M3 PDF File

VB20150S-M3
VB20150S-M3

Overview
www.
vishay.
com VB20150S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
55 V at IF = 5.
0 A TMBS ® D2PAK (TO-263AB) K A NC VB20150S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max.
Package Circuit configuration 20 A 150 V 160 A 0.
75 V 150 °C D2PAK (TO-263AB) Single FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL...


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