Insulated Gate Bipolar Transistor
Description
MG6405WZ
650V 60A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V 60A 1.5V 568pcs
lFeatures 1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) High Speed Switching & Low Switching Loss
4) Short Circuit Withstand Time 2μs
lOutline
Wafer
lInner Circuit
(1)
(2) (3)
...
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