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CTH6106PS-T52

Part Number	CTH6106PS-T52
Manufacturer	CT Micro
Description	P-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTH6106PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -60 V  Drain-Source On-Resis...
Datasheet	CTH6106PS-T52 PDF File

Overview

CTH6106PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -60 V  Drain-Source On-Resistance RDS(ON) 14m, at VGS= -10V, IDS= -17A RDS(ON) 16m, at VGS= -4.
5V, IDS= -14A  Continuous Drain Current at TC=25℃ ID = -61A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Load Switch  Power Management  LCD Display inverter  DC/DC Converter Description The CTH6106PS-T52 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprieta...

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CTH6106PS-T52 P-Channel MOSFET - CT Micro

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