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CT3401-R3
P-Channel MOSFET
Description
CT3401-R3 P-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS - 30 V Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.1A RDS(ON) 64mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 86mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃ Continuous Drain Current at TA=25 ID = - 4.1A Advanced high cell density Trench Technology RoHS Complianc...
CT Micro
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CT3401-R3
P-Channel MOSFET
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