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CTL0383NS-R3

Part Number	CTL0383NS-R3
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTL0383NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resista...
Datasheet	CTL0383NS-R3 PDF File

Overview

CTL0383NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resistance RDS(ON) 48m, at VGS= 10V, ID= 3.
4A RDS(ON) 54m, at VGS= 4.
5V, ID= 2.
7A RDS(ON) 75m, at VGS= 2.
5V, ID= 1.
0A  Continuous Drain Current at TC=25℃ID = 3.
8A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL0383NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and no...

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CTL0383NS-R3 N-Channel MOSFET - CT Micro

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