N-Channel MOSFET
Description
CTH3506NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance
RDS(ON) 17m, at VGS= 10V, ID= 30A
Continuous Drain Current at TC=25℃ID =35.1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH3506NS-T52 is the N-Channel logic enhancement mode powe...
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