CTD6006-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance
RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A
Continuous Drain Current at TC=25℃, ID =35A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTD6006-T52 is the N-Cha...