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CTD6006-T52

CT Micro

N-Channel MOSFET


Description
CTD6006-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A  Continuous Drain Current at TC=25℃, ID =35A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTD6006-T52 is the N-Cha...



CT Micro

CTD6006-T52

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