DatasheetsPDF.com

CTL0266NS-R3

Part Number	CTL0266NS-R3
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTL0266NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resist...
Datasheet	CTL0266NS-R3 PDF File

Overview

CTL0266NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 82m, at VGS= 10V, ID= 2.
6A RDS(ON) 96m, at VGS= 4.
5V, ID= 2.
1A  Continuous Drain Current at TC=25℃ID = 2.
6A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0266NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cel...

Similar Datasheet

CTL0266NS-R3 N-Channel MOSFET - CT Micro

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)