N-Channel MOSFET
Description
CTH2506NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance
RDS(ON) 27m, at VGS= 10V, ID= 20A RDS(ON) 34m, at VGS= 4.5V, ID= 16A
Continuous Drain Current at TC=25℃ID =27.6A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH2506NS-T52 is the N...
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