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V30DM120C

Vishay
Part Number V30DM120C
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 8, 2020
Detailed Description www.vishay.com V30DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF ...
Datasheet PDF File V30DM120C PDF File

V30DM120C
V30DM120C

Overview
www.
vishay.
com V30DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
51 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V30DM120C Anode 1 K Anode 2 Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 LINKS TO ADDITION...


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