IGBT
Description
IGC54T65T8RM
IGBT3 Chip Medium Power
Features VCES = 650 V ICn = 100 A 650 V trench & field stop technology
High short circuit capability, self limiting short circuit current
Positive temperature coefficient
Easy paralleling Potential applications Drives Product validation Technology qualified for industrial applications. Ready for validatio...
Similar Datasheet
- IGC54T65T8RM IGBT - Infineon
