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FF11MR12W1M1P_B11

Part Number	FF11MR12W1M1P_B11
Manufacturer	Infineon
Description	MOSFET
Published	Jun 14, 2020
Detailed Description	FF11MR12W1M1P_B11 EasyDUALModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC/TIM EasyDUALmodulewithCoolSiC™Trenc...
Datasheet	FF11MR12W1M1P_B11 PDF File

Overview

FF11MR12W1M1P_B11 EasyDUALModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC/TIM EasyDUALmodulewithCoolSiC™TrenchMOSFETandPressFIT/NTC/TIM VorläufigeDaten/PreliminaryData - PotentielleAnwendungen • AnwendungenmithohenSchaltfrequenzen • DC/DCWandler • SolarAnwendungen • USV-Systeme ElektrischeEigenschaften • HoheStromdichte • NiederinduktivesDesign • NiedrigeSchaltverluste MechanischeEigenschaften • IntegrierterNTCTemperaturSensor • PressFITVerbindungstechnik • Robuste Montage durch integrierte Befestigungsklammern • Thermisches Interface Material bereits aufgetragen VDSS = 1200V ID nom = 100A / IDRM = 200A PotentialApplications • HighFrequencySwitchingapplication • DC/DCconverter • Solarapplications • UPSsystems ElectricalFeatures • Highcurrentdensity • Lowinductivedesign • Lowswitchinglosses MechanicalFeatures • IntegratedNTCtemperaturesensor • PressFITcontacttechnology • Rugged mounting due to integrated mounting clamps • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet www.
infineon.
com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.
0 2020-02-27 FF11MR12W1M1P_B11 MOSFET/MOSFET HöchstzulässigeWerte/MaximumRatedValues Drain-Source-Spannung Drain-sourcevoltage Tvj = 25°C Drain-Gleichstrom DCdraincurrent Tvj = 175°C, VGS = 15 V TH = 50°C GepulsterDrainstrom Pulseddraincurrent verifiziertdurchDesign,tplimitiertdurchTvjmax verifiedbydesign,tplimitedbyTvjmax Gate-SourceSpannung Gate-sourcevoltage VorläufigeDaten PreliminaryData VDSS ID nom ID pulse VGSS 1200 100 200 -10 / 20 V A A V CharakteristischeWerte/CharacteristicValues Einschaltwiderstand Drain-sourceonresistance ID = 100 A VGS =...

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FF11MR12W1M1P_B11 MOSFET - Infineon

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