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TGI8596-50

Toshiba
Part Number TGI8596-50
Manufacturer Toshiba
Description MICROWAVE POWER GaN HEMT
Published Jun 19, 2020
Detailed Description MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.0dBm at Pin= 41dBm...
Datasheet PDF File TGI8596-50 PDF File

TGI8596-50
TGI8596-50

Overview
MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.
0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.
0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency Pout IDS add VDS= 24V IDSset= 1.
5A f= 8.
5 to 9.
6 GHz @Pin= 41dBm dBm 46.
0 47.
0  A  5.
0 6.
0 %  31  Linear Gain Channel Temperature Rise GL Tch @Pin= 20dBm dB (VDS  IDS  Pin  Pout)  Rth(c-c) °C 7.
0 9.
0   130 150 Recommended Gate Resistance(Rg): 13.
3  ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 5V IDS= 5.
0A VDS= 5V IDS= 23mA VDS= 5V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -10mA Thermal Resistance Rth(c-c) Channel to Case UNIT MIN.
TYP.
MAX.
S  4.
5  V -2.
6 -4.
0 -6.
0 A  15.
0  V -10.
...


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