MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET
TIM1314-9L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 39.5dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN
G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output P...
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