FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 11.7GHz to 12.7GHz ･HIGH GAIN
G1dB= 6.0dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 30.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1112-15L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power ...
