MICROWAVE POWER GaAs FET
Description
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 7.1GHz to 7.9GHz ･HIGH GAIN
G1dB= 9.0dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7179-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
G...
Similar Datasheet
