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TGI7179-60LHA

Part Number	TGI7179-60LHA
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaN HEMT TGI7179-60LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 48dBm at Pin= 40.5...
Datasheet	TGI7179-60LHA PDF File

Overview

MICROWAVE POWER GaN HEMT TGI7179-60LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 48dBm at Pin= 40.
5dBm ŋHIGH GAIN GL= 12.
0dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 40V IDSset= 0.
4A f = 7.
1 to 7.
9GHz @Pin= 40.
5dBm dBm 47.
0 48.
0  A  3.
5 4.
5 %  37  Linear Gain Gain flatness GL @Pin= 20dBm G dB 11.
0 12.
0  dB   0.
8 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise *1 IM3 IM3-2 IDS2 Tch Two-Tone Test Po= 41dBm (Single Carrier Level) ∆f= 5MHz (IM3) ∆f= 150MHz (IM3-2) dBc -25 -30  dBc -25 -27  A   2.
5 °C  120 140 Recommended Gate Resistance(Rg): 10  *1: ∆Tch  (VDS  IDS2  Pin(two-tone)  Po(two-tone))  Rth(c-c), calculated using p...

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TGI7179-60LHA MICROWAVE POWER GaN HEMT - Toshiba

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