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TGI5867-25L

Part Number	TGI5867-25L
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 44.5dBm at Pin= 35dB...
Datasheet	TGI5867-25L PDF File

Overview

MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 44.
5dBm at Pin= 35dBm ŋHIGH GAIN GL= 13.
5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -40dBc(Min.
) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 1.
75A f= 5.
85 to 6.
75 GHz @Pin= 35dBm dBm 44.
0 44.
5  A  2.
7 3.
2 %  39  Linear Gain Gain Flatness 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise GL G IM3 IDS2 Tch @Pin= 20dBm dB dB Two-Ton...

Similar Datasheet

TGI5867-25L MICROWAVE POWER GaN HEMT - Toshiba

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