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TGI5867-50L

Part Number	TGI5867-50L
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0...
Datasheet	TGI5867-50L PDF File

Overview

MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.
0dBm at Pin= 39.
0dBm ･HIGH GAIN GL= 13.
5dB at 5.
85GHz to 6.
75GHz ･LOW INTERMODULATION DISTORTION IM3(Min.
)= -40dBc at Po=32.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 3.
0A f= 5.
85 to 6.
75GHz @Pin= 39dBm Linear Gain GL @Pin= 20dBm Gain flatness G 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two-Tone Test Po= 32.
0dBm, ∆f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS +...

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TGI5867-50L MICROWAVE POWER GaN HEMT - Toshiba

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