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TIM7179-60SL

Toshiba
Part Number TIM7179-60SL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 6.5dB at 7.1G...
Datasheet PDF File TIM7179-60SL PDF File

TIM7179-60SL
TIM7179-60SL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.
0dBm at 7.
1GHz to 7.
9GHz ･HIGH GAIN G1dB= 6.
5dB at 7.
1GHz to 7.
9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.
5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-60SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.
5A f = 7.
1 to 7.
9GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 36.
5dBm, f= 5MHz (Singl...


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