Silicon Carbide MOSFET
Description
IMW120R090M1H
IMW120R090M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V 0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust...
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