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IXFR64N50Q3

IXYS
Part Number IXFR64N50Q3
Manufacturer IXYS
Description Power MOSFET
Published Jul 3, 2020
Detailed Description Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR64...
Datasheet PDF File IXFR64N50Q3 PDF File

IXFR64N50Q3
IXFR64N50Q3

Overview
Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s 50/60 Hz, 1 Minute 45 A 160 A 64 A 4 J 50 V/ns 500 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 2500 V ...


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